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PDF STP12NM50N Data sheet ( Hoja de datos )
| Número de pieza | STP12NM50N | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB12NM50N - STD12NM50N
STF12NM50N - STP12NM50N
N-channel 500V - 0.29Ω - 11A - TO-220 /FP- D2PAK - DPAK
Second generation MDmesh™ Power MOSFET
General features
Type
STB12NM50N
STD12NM50N
STF12NM50N
STP12NM50N
VDSS
(@Tjmax)
550V
550V
550V
550V
RDS(on)
<0.38Ω
<0.38Ω
<0.38Ω
<0.38Ω
ID
11A
11A
11A (1)
11A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistancel
Description
This series of devices is realized with the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
Applications
■ Switching application
3
2
1
TO-220
3
1
DPAK
3
1
D²PAK
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Part number
STB12NM50N
STD12NM50N
STF12NM50N
STP12NM50N
Marking
B12NM50N
D12NM50N
F12NM50N
P12NM50N
Package
D²PAK
DPAK
TO-220FP
TO-220
Packaging
Tape & reel
Tape & reel
Tube
Tube
November 2006
Rev 7
1/18
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18
1 page  
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STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD=250 V, ID= 5.5A,
RG=4.7Ω, VGS=10V
(see Figure 15)
Min Typ. Max Unit
15 ns
15 ns
60 ns
14 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD=11A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11A,
di/dt = 100A/µs,
VDD=100V, Tj=25°C
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11A,
di/dt = 100A/µs,
VDD=100V, Tj=150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
11 A
44 A
1.3 V
340 ns
3.5 µC
20 A
420 ns
4 µC
20 A
5/18
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STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N
Package mechanical data
DIM.
A
b
b1
c
D
E
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
MIN.
4.40
0.61
1.15
0.49
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
TO-220 MECHANICAL DATA
mm.
TYP
16.40
28.90
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
MIN.
0.173
0.024
0.045
0.019
0.60
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
inch
TYP.
0.645
1.137
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116
11/18
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| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet STP12NM50N.PDF ] | |
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