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PDF BC109C Data sheet ( Hoja de datos )
| Número de pieza | BC109C | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BC109C (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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BC107,A,B
BC108B,C
BC109B,C
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC107, BC108,
BC109 series types are small signal NPN silicon
transistors, manufactured by the epitaxial planar
process, designed for general purpose amplifier
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
JC
BC107
50
45
6.0
BC108 BC109
30 30
25 25
5.0 5.0
200
600
-65 to +200
175
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=45V (BC107)
ICBO
VCB=45V, TA=125°C (BC107)
ICBO
VCB=25V (BC108, BC109)
ICBO
VCB=25V, TA=125°C (BC108, BC109)
BVCEO
IC=2.0mA (BC107)
45
BVCEO
IC=2.0mA (BC108, BC109)
25
BVEBO
IE=10μA (BC107)
6.0
BVEBO
IE=10μA (BC108, BC109)
5.0
VCE(SAT) IC=10mA, IB=0.5mA
VCE(SAT) IC=100mA, IB=5.0mA
VBE(SAT) IC=10mA, IB=0.5mA
VBE(SAT) IC=100mA, IB=5.0mA
VBE(ON)
VCE=5.0V, IC=2.0mA
0.55
VBE(ON)
VCE=5.0V, IC=10mA
hFE VCE=5.0V, IC=10μA (BC107B, BC108B, BC109B) 40
hFE VCE=5.0V, IC=10μA (BC108C, BC109C)
100
hFE VCE=5.0V, IC=2.0mA (BC107)
110
hFE VCE=5.0V, IC=2.0mA (BC107A)
110
hFE VCE=5.0V, IC=2.0mA (BC107B, BC108B, BC109B) 200
hFE VCE=5.0V, IC=2.0mA (BC108C, BC109C) 420
TYP MAX
15
4.0
15
4.0
0.25
0.6
0.7 0.83
1.0 1.05
0.7
0.77
450
220
450
800
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
μA
nA
μA
V
V
V
V
V
V
V
V
V
V
R1 (16-August 2012)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BC109C.PDF ] | |
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