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PDF C1383 Data sheet ( Hoja de datos )
| Número de pieza | C1383 | |
| Descripción | NPN Transistor - 2SC1383 | |
| Fabricantes | Panasonic | |
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 1. - NPN Transistor - 2SC1383  Hay una vista previa y un enlace de descarga de C1383 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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2SC1383, 2SC1384
Silicon NPN epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SA0683, 2SA0684
5.9±0.2
Unit: mm
4.9±0.2
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Complementary pair with 2SA0683, 2SA0684
0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SC1383
2SC1384
VCBO
30
60
Collector-emitter voltage 2SC1383
(Base open)
2SC1384
VCEO
25
50
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
5
1
1.5
1
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
0.45+–00..12
0.45+–00..12
(1.27)
(1.27)
1: Emitter
123
2: Collector
3: Base
2.54±0.15
EIAJ: SC-51
TO-92L-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-base voltage
(Emitter open)
2SC1383
2SC1384
VCBO
IC = 10 µA, IE = 0
30
60
Collector-emitter voltage
(Base open)
2SC1383
2SC1384
VCEO
IC = 2 mA, IB = 0
25
50
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *1
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VEBO
ICBO
hFE1 *2
hFE2
VCE(sat)
VBE(sat)
fT
Cob
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 10 V, IC = 500 mA
VCE = 5 V, IC = 1 A
IC = 500 mA, IB = 50 mA
IC = 500 mA, IB = 50 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
5
85
50
Typ Max
0.1
340
0.2 0.4
0.85 1.20
200
11 20
Unit
V
V
V
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240 170 to 340
Publication date: March 2003
SJC00104CED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet C1383.PDF ] | |
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