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Número de pieza | MCR100-6A | |
Descripción | Standard Gate SCR | |
Fabricantes | DnI | |
Logotipo | ||
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MCR100-6A
Sensitive Gate
Silicon Controlled -
Rectifiers
Symbol
3. Anode
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 0.8 A )
Low On-State Voltage (1.2V(Typ.)@ ITM)
Pb - Free Packages are available
1.Cathode
2.Gate
BVDRM = 600V
IT(RMS) = 0.8 A
ITSM = 10 A
TO-92
General Description
Sensitive-gate triggering thyristor is suitable for the applica-
tion where gate current limited such as small motor control,
gate driver for large thyristor, sensing and detecting circuits.
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
sine wave,50 to 60Hz,gate open
half sine wave : TC = 74 °C
all conduction angle
1/2 Cycle, 60Hz, sine wave
non-repetitive , t = 8.3ms
t = 8.3ms
PGM
PG(AV)
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
TA = 25 °C, pulse width 1.0
TA = 25 °C, t = 8.3ms
IFGM
Forward Peak Gate Current
TA = 25 °C, pulse width 1.0
VRGM
TJ
TSTG
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TA = 25 °C, pulse width 1.0
Ratings
600
0.5
0.8
10
0.415
2
0.1
1
5.0
- 40 ~ 125
- 40 ~ 125
Units
V
A
A
A
A2s
W
W
A
V
°C
°C
April, 2005. Rev.0
copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
1/5
1 page www.DataSheet4U.com
MCR100-6A
TO-92 Package Dimension
mm Inch
Dim.
Min. Typ. Max. Min. Typ. Max.
A 4.2
0.165
B 3.7 0.146
C 4.43
4.83 0.174
0.190
D 14.07
14.87
0.554
0.585
E 0.4 0.016
F 4.43
4.83 0.174
0.190
G 0.45 0.017
H 2.54
0.100
I 2.54
0.100
J 0.33
0.48 0.013
0.019
A
E
B
F
C
G
1
D2
3
HI
1. Cathode
2. Gate
3. Anode
J
5/5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet MCR100-6A.PDF ] |
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