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PDF DCP10C60 Data sheet ( Hoja de datos )

Número de pieza DCP10C60
Descripción Standard Gate SCR
Fabricantes DnI 
Logotipo DnI Logotipo



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No Preview Available ! DCP10C60 Hoja de datos, Descripción, Manual

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DCP10C60
Standard Gate
Silicon Controlled -
Rectifiers
Symbol
2. Anode
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 10 A )
Low On-State Voltage (1.4V(Typ.) @ ITM)
Non-isolated Type
1.Cathode
3.Gate
General Description
Standard gate triggering thyristor is suitable for the application
where requiring high bidirectional blocking voltage capability and
also suitable for over voltage protection ,motor control circuit in
power tool, inrush current limit circuit and heating control sys-
tem.
BVDRM = 600V
IT(RMS) = 66 A
ITSM = 6A
TO-220
123
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
sine wave,50 to 60Hz,gate open
half sine wave : TC =111 °C
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
di/dt Critical rate of rise of on-state current
TC = 111 °C, pulse width 1.0
PGM
Forward Peak Gate Power Dissipation
TC = 111 °C,pulse width 1.0
PG(AV)
Forward Average Gate Power Dissipation TC = 111 °C, pulse width 1.0
IFGM
VRGM
TJ
TSTG
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TC =111 °C, pulse width 1.0
Ratings
600
6.4
10
110
60
50
5
0.5
2
5.0
- 40 ~ 125
- 40 ~ 150
June, 2005. Rev. 0
copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
Units
V
A
A
A
A2s
A/
W
W
A
V
°C
°C
1/5

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DCP10C60 pdf
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TO-220 Package Dimension
Dim.
mm
Min. Typ.
A 9.7
B 6.3
C 9.0
D 12.8
E 1.2
F 1.7
G 2.5
H 3.0
I 1.25
J 2.4
K 5.0
L 2.2
M 1.25
N 0.45
O 0.6
3.6
DCP10C60
Max.
10.1
6.7
9.47
13.3
1.4
3.4
1.4
2.7
5.15
2.6
1.55
0.6
1.0
Min.
0.382
0.248
0.354
0.504
0.047
0.118
0.049
0.094
0.197
0.087
0.049
0.018
0.024
Inch
Typ.
0.067
0.098
0.142
Max.
0.398
0.264
0.373
0.524
0.055
0.134
0.055
0.106
0.203
0.102
0.061
0.024
0.039
E
B
F
C
A HI
C1.0
G
D
L
1
2
3
J
K
N
M
1. Cathode
2. Anode
3. Gate
O
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