DataSheet.es    


PDF DFF50N06 Data sheet ( Hoja de datos )

Número de pieza DFF50N06
Descripción N-Channel MOSFET
Fabricantes DnI 
Logotipo DnI Logotipo



Hay una vista previa y un enlace de descarga de DFF50N06 (archivo pdf) en la parte inferior de esta página.


Total 7 Páginas

No Preview Available ! DFF50N06 Hoja de datos, Descripción, Manual

www.DataSheet4U.com
DFF50N06
N-Channel MOSFET
Features
RDS(on) (Max 0.023)@VGS=10V
Gate Charge (Typical 36nC)
Improved dv/dt Capability
High ruggedness
100% Avalanche Tested
1.Gate
2.Drain
3.Source
General Description
This N-channel enhancement mode field-effect power transistor
using DI semiconductor’s advanced planar stripe, DMOS technol-
ogy intended for battery operated systems like a DC-DC converter
motor control , ups ,audio amplifier.
Also, especially designed to minimize rds(on) , low gate charge
and high rugged avalanche characteristics.
BVDSS = 60V
RDS(ON) = 0.023 ohm
ID = 28A
TO-220F
123
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
60
28
20
112
±25
643
4.7
7.0
47
0.31
- 55 ~ 175
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
Value
Typ.
-
0.5
-
Max.
3.22
-
62.5
June, 2006, Rev.0.
Copyright@ D&I Semiconductor Co., Ltd., Korea . All rights reserved
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
1/7

1 page




DFF50N06 pdf
www.DataSheet4U.com
DFF50N06
Fig. 12. Gate Charge Test Circuit & Waveforms
12V 200nF 50KO
Same Type
as DUT
VGS
300nF
VGS
VDS
Qgs
DUT
1mA
Qg
Qgd
Charge
Fig 13. Switching Time Test Circuit & Waveforms
VDS
10V
Pulse
RG
Generator
RL
VDD
(0.5 rated VDS)
DUT
VDS 90%
Vin 10%
td(on)
tr
ton
td(off)
tf
toff
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
10V
VDS
ID
RG
L
DUT
VDD
1 BVDSS
EAS = LL IAS2
2 BVDSS - VDD
BVDSS
IAS
ID(t)
tp
VDS(t)
Time
5/7
Copyright@ D&I Semiconductor Co., Ltd., Korea . All rights reserved

5 Page










PáginasTotal 7 Páginas
PDF Descargar[ Datasheet DFF50N06.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
DFF50N06N-Channel MOSFETDnI
DnI

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar