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PDF DFK1N60 Data sheet ( Hoja de datos )
| Número de pieza | DFK1N60 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | DnI | |
| Logotipo |  |
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DFK1N60
N-Channel MOSFET
N-Channel MOSFET
Features
High ruggedness
RDS(on) (Max 11.5 )@VGS=10V
Gate Charge (Typical 7nC)
Improved dv/dt Capability
100% Avalanche Tested
{ 2. Drain
1. Gate{
{ 3. Source
General Description
This N-channel enhancement mode field-effect power transistor
using DI semiconductor’s advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The SOT-223 pkg is well suited for
charger SMPS and small power inverter application.
BVDSS = 600V
RDS(ON) = 11.5 ohm
ID = 0.8A
SOT-223
2
1
23
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
600
0.8
0.63
3.2
±30
48
0.3
4.5
3
0.024
- 55 ~ 150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min.
-
-
Value
Typ.
-
-
Max.
12
42
Units
°C/W
°C/W
Note: RθJA is the sum of the junction to case and case to ambient resistance where the case thermal resistance is defined as the solder
mounting suface of the drain pins .
( 42°C/W when mounted on a 1
Rinθ2JCpaisd
guaranteed by
of 2 oz copper
design
)
while
RθJA
is
determined
by
the
user’s
board
design.
Jan, 2005. Rev. 0.
1/7
Copyright@ D&I Semiconductor Co., Ltd., Korea. All rights reserved.
1 page  
www.DataSheet4U.com
DFK1N60
Fig. 12. Gate Charge Test Circuit & Waveforms
12V
50K
200nF
300nF
VGS
SameType
asDUT
VDS
VGS
10V
Qgs
Qg
Qgd
1mA
DUT
Fig 13. Switching Time Test Circuit & Waveforms
Charge
VDS
10V
Pulse
RG
Generator
RL
VDD
(0.5ratedVDS)
DUT
VDS 90%
Vin10%
td(on)
tr
ton
td(off) tf
toff
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
10V
VDS
RG
ID
L
VDD
DUT
EAS=--21-- LLIAS2--B--V--DB--SV-S-D---S--S-V--D--D--
BVDSS
IAS
VDD
ID(t)
VDS(t)
tp Time
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DFK1N60.PDF ] | |
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