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PDF DFF2N60 Data sheet ( Hoja de datos )
| Número de pieza | DFF2N60 | |
| Descripción | 2.4A, 600V, N-Channel MOSFET | |
| Fabricantes | DnI | |
| Logotipo |  |
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 1. - 600V, 2.4A, N-Ch, MOSFET  Hay una vista previa y un enlace de descarga de DFF2N60 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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DFF2N60
N-Channel MOSFET
Features
High ruggedness
RDS(on) (Max 5.5 )@VGS=10V
Gate Charge (Typical 15nC)
Improved dv/dt Capability
100% Avalanche Tested
1. Gate{
{ 2. Drain
{ 3. Source
BVDSS = 600V
RDS(ON) = 5.5 ohm
ID = 2.4A
General Description
This N-channel enhancement mode field-effect power transistor
using DI semiconductor’s advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220F PAK pkg is well suited
for charger SMPS and small power inverter application.
TO-220F
123
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
VDSS
ID
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)*
Continuous Drain Current(@TC = 100°C)*
600 V
2.4 A
1.5 A
IDM Drain Current Pulsed
VGS Gate to Source Voltage
(Note 1)
9.6
±30
A
V
EAS
EAR
dv/dt
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 3)
140
2.8
4.5
mJ
mJ
V/ns
PD
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
28 W
0.21 W/°C
TSTG, TJ
TL
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
- 55 ~ 150
300
°C
°C
Thermal Characteristics
* Ensure that the channel temperature does not exceed 150°C
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min.
-
-
Value
Typ.
-
-
Max.
4.5
62.5
Units
°C/W
°C/W
Sep, 2005. Rev. 2
Copyright@ D&I Semiconductor Co., Ltd., Korea. All rights reserved.
1/7
1 page  
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Fig. 12. Gate Charge Test Circuit & Waveforms
DFF2N60
12V 200nF 50KO
Same Type
as DUT
VGS
300nF
VGS
VDS
Qgs
DUT
1mA
Qg
Qgd
Charge
Fig 13. Switching Time Test Circuit & Waveforms
VDS
10V
Pulse
RG
Generator
RL
VDD
(0.5 rated VDS)
DUT
VDS 90%
Vin 10%
td(on)
tr
ton
td(off)
tf
toff
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
10V
VDS
ID
RG
L
DUT
VDD
1 BVDSS
EAS = LL IAS2
2 BVDSS - VDD
BVDSS
IAS
ID(t)
tp
VDS(t)
Time
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DFF2N60.PDF ] | |
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