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PDF FPD3000SOT89 Data sheet ( Hoja de datos )

Número de pieza FPD3000SOT89
Descripción HIGH LINEARITY PACKAGED PHEMT
Fabricantes Filtronic Compound Semiconductors 
Logotipo Filtronic Compound Semiconductors Logotipo



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FPD3000SOT89
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
PERFORMANCE (1850 MHz)
30 dBm Output Power (P1dB)
13 dB Small-Signal Gain (SSG)
1.3 dB Noise Figure
45 dBm Output IP3
45% Power-Added Efficiency
Evaluation Boards Available
Available in Lead Free Finish: FPD3000SOT89E
DESCRIPTION AND APPLICATIONS
The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25 x 3000 µm Schottky barrier Gate, defined by high-
resolution stepper-based photolithography. The recessed and offset Gate structure minimizes
parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a
range of bias conditions and input power levels. The FPD3000 is available in die form and in other
packages.
Typical applications include drivers or output stages in PCS/Cellular base station high-intercept-
point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ Max
RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL
Power at 1dB Gain Compression
Small-Signal Gain
Power-Added Efficiency
Noise Figure
P1dB
SSG
PAE
NF
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
IP3
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS;
POUT = P1dB
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 25% IDSS
VDS = 5V; IDS = 50% IDSS
Matched for optimal power
Matched for best IP3
29.5 30
11.5 13
45
1.3
0.9
42
45
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 3 mA
IGS = 3 mA
IGD = 3 mA
750 930 1100
1.5
800
2 20
0.7 1.0 1.3
12 16
12 16
Units
dBm
dB
%
dB
dBm
mA
A
mS
µA
V
V
V
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http:// www.filtronic.co.uk/semis
Revised: 01/05/05

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FPD3000SOT89 pdf
FPD3000SOT89
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
Typical Intermodulation performance
VDS = 5V, IDS = 50% IDSS at f = 1.85GHz
-40.00
21 -42.00
Pout (dBm)
3rds (dBc)
19
-44.00
-46.00
-48.00
17
-50.00
-52.00
15
-54.00
13 -56.00
-58.00
11 -60.00
0.7 1.7 2.8 3.8 4.7 5.7 6.8 7.8 8.8 9.8
Inout Power (dBm)
Note: pHEMT devices exhibit non-classical intermodulation performance, with equivalent IP3
values exceeding 14 dB above P1dB. This IMD enhancement is affected by the quiescent bias
current, the Drain-Source voltage, and the tuning or matching applied to the device.
Maximum Stable Gain & S21
FPD3000SOT89 5V / 50%IDSS
35
30 MSG
S21
25
20
15
10
5
0
0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 8
Frequency (GHz)
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http:// www.filtronic.co.uk/semis
Revised: 01/05/05

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