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PDF FPD3000P100 Data sheet ( Hoja de datos )
| Número de pieza | FPD3000P100 | |
| Descripción | 2W PACKAGED POWER PHEMT | |
| Fabricantes | Filtronic Compound Semiconductors | |
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• FEATURES
♦ 32.5 dBm Linear Output Power
♦ 17 dB Power Gain at 2 GHz
♦ 9.5 dB Maximum Stable Gain at 10 GHz
♦ 42 dBm Output IP3
♦ 45% Power-Added Efficiency at 2 GHz
FPD3000P100
2W PACKAGED POWER PHEMT
• DESCRIPTION AND APPLICATIONS
The FPD3000P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility
Transistor (PHEMT), featuring a 0.25 µm by 3000 µm Schottky barrier gate, defined by high-
resolution stepper-based photolithography. The recessed and offset Gate structure minimizes
parasitics to optimize performance. The epitaxial structure and processing have been optimized for
reliable high-power applications. The FPD3000P100 also features Si3N4 passivation and is also
available in die form and in the low cost plastic SOT89 plastic package.
Typical applications include commercial and other narrowband and broadband high-performance
amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output
amplifiers, and medium-haul digital radio transmitters.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ Max Units
UNLESS OTHERWISE NOTED, RF SPECIFICATIONS MEASURED AT f = 2 GHz USING CW SIGNAL
Power at 1dB Gain Compression
Power Gain at P1dB
Maximum Stable Gain (S21/S12)
P1dB
G1dB
SSG
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
f = 2 GHz
31.0 32.5
16.5 17.0
20.5 21.5
dBm
dB
dB
f = 10 GHz
8.5 9.5
dB
Power-Added Efficiency
PAE
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
IP3
VDS = 8 V; IDS = 50% IDSS;
POUT = P1dB
VDS = 8V; IDS = 50% IDSS
Matched for optimal power
45 %
42 dBm
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
IDSS
IMAX
GM
IGSO
|VP|
|VBDGD|
θJC
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 3 mA
IGD = 3 mA
VDS > 6V
750 930 1110 mA
1.5 A
800 mS
2 20 µA
0.7 1.0 1.3
V
14.5 16.0
V
24 °C/W
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Released: 6/27/05
Email: [email protected]
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet FPD3000P100.PDF ] | |
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