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PDF KMB6D0DN30QA Data sheet ( Hoja de datos )
| Número de pieza | KMB6D0DN30QA | |
| Descripción | Trench MOSFET | |
| Fabricantes | KEC | |
| Logotipo |  |
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TECHNICAL DATA
GENERAL DESCRIPTION
This planer stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and SMPS.
FEATURES
VDSS=30V, ID=6A.
Drain-Source ON Resistance.
RDS(ON)=28m (Max.) @VGS=10V
RDS(ON)=42m (Max.) @VGS=4.5V
Super High Dense Cell Design
High Power and Current Handing Capability
KMB6D0DN30QA
Dual N-Ch Trench MOSFET
DP
H
T
G
L
A
DIM MILLIMETERS
A 4.85 +_ 0.2
B1 3.94 +_ 0.2
85
B2 6.02+_ 0.3
D 0.4 +_ 0.1
B1 B2
G 0.15+0.1/-0.05
H 1.63 +_ 0.2
14
L 0.65 +_ 0.2
P 1.27
T 0.20+0.1/-0.05
MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING UNIT
Drain Source Voltage
Gate Source Voltage
Drain Current
DC
Pulsed (note1)
Drain Source Diode Forward Current
Drain Power Dissipation
25
100
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
* : Surface Mounted on FR4 Board, t 10sec.
VDSS
VGSS
ID *
IDP
IS
PD *
Tj
Tstg
RthJA*
30
20
6
20
1.3
2
1.6
-50~150
-50~150
78
V
V
A
A
A
W
W
/W
PIN CONNECTION (TOP VIEW)
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
1
2
3
4
8
7
6
5
FLP-8
2007. 4. 3
Revision No : 0
1/5
1 page  
KMB6D0DN30QA
Fig. 9 Gate Charge
Schottky
ID Diode
0.5 VDSS
1.0 mA
VGS
ID
VDS
VGS
10 V
Qgs Qgd
Qg
Q
Fig. 10 Resistive Load Switching
0.5 VDSS
6Ω
10 V VGS
RL
VDS
VDS
90%
VGS 10%
td(on)
tr
ton
td(off)
tf
toff
2007. 4. 3
Revision No : 0
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet KMB6D0DN30QA.PDF ] | |
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