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Número de pieza | KMB4D0N30SA | |
Descripción | Trench MOSFET | |
Fabricantes | KEC | |
Logotipo | ||
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TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and SMPS.
FEATURES
VDSS=30V, ID=4A
Drain-Source ON Resistance
RDS(ON)=47m (Max.) @ VGS=10V
RDS(ON)=65m (Max.) @ VGS=4.5V
Super Hige Dense Cell Design
KMB4D0N30SA
N-Ch Trench MOSFET
E
L BL
23
1
PP
M
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC@TA=25
DC@TA=70
Pulsed
Drain-Source-Diode Forward Current
Drain Power Dissipation
TA=25
TA=70
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Note : Surface Mounted on FR4 Board, t 10sec.
PIN CONNECTION (TOP VIEW)
D
3
SYMBOL N-Ch UNIT
VDSS
VGSS
30 V
20 V
4.0
ID
3.5 A
IDP 20
IS 1.04 A
1.25
PD W
0.8
Tj 150
Tstg -55 150
RthJA 130 /W
3
2007. 4. 17
21
GS
21
Revision No : 0
SOT-23
KND
1/5
1 page KMB4D0N30SA
Fig9. Gate Charge Circuit and Wave Form
Schottky
ID Diode
0.5 VDSS
1.0 mA
VGS
ID
VDS
VGS
10 V
Qgs Qgd
Qg
Q
Fig10. Resistive Load Switching
0.5 VDSS
6Ω
10 V
VGS
RL
VDS
VDS
90%
VGS 10%
td(on)
tr
ton
td(off)
tf
toff
2007. 4. 17
Revision No : 0
5/5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet KMB4D0N30SA.PDF ] |
Número de pieza | Descripción | Fabricantes |
KMB4D0N30SA | Trench MOSFET | KEC |
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