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PDF KMB3D0P30SA Data sheet ( Hoja de datos )
| Número de pieza | KMB3D0P30SA | |
| Descripción | Trench MOSFET | |
| Fabricantes | KEC | |
| Logotipo |  |
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TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and SMPS.
FEATURES
VDSS=-30V, ID=-3A
Drain-Source ON Resistance
RDS(ON)=80m (Max.) @ VGS=-10V
RDS(ON)=140m (Max.) @ VGS=-4.5V
Super Hige Dense Cell Design
KMB3D0P30SA
P-Ch Trench MOSFET
E
L BL
23
1
PP
M
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC@TA=25
DC@TA=70
Pulsed
Drain-Source-Diode Forward Current
Drain Power Dissipation
TA=25
TA=70
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Note : *Sorface Mounted on FR4 Board
PIN CONNECTION (TOP VIEW)
D
3
SYMBOL N-Ch UNIT
VDSS
-30 V
VGSS
20 V
-3
ID*
-2.5 A
IDP -12
IS
-1.25
A
1.25
PD* W
0.8
Tj 150
Tstg -55 150
RthJA*
100
/W
3
21
GS
21
2007. 6. 28
Revision No : 1
SOT-23
1/5
1 page  
KMB3D0P30SA
Fig9. Gate Charge Circuit and Wave Form
Schottky
Diode
ID
0.5 VDSS
1.0 mA
VGS
ID
VDS
VGS
-4.5V
Qgs
Qgd
Qg
Q
Fig10. Resistive Load Switching
0.5 VDSS
50Ω
-10 V
VGS
RL td(on)
VGS
10%
VDS
ton
tr
VDS 90%
td(off)
toff
tf
2007. 6. 28
Revision No : 1
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet KMB3D0P30SA.PDF ] | |
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