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PDF KMB2D0N60SA Data sheet ( Hoja de datos )
| Número de pieza | KMB2D0N60SA | |
| Descripción | Trench MOSFET | |
| Fabricantes | KEC | |
| Logotipo |  |
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TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and SMPS.
FEATURES
VDSS=60V, ID=2A
Drain-Source ON Resistance
RDS(ON)=160m (Max.) @ VGS=10V
RDS(ON)=220m (Max.) @ VGS=4.5V
Super Hige Dense Cell Design
KMB2D0N60SA
N-Ch Trench MOSFET
E
L BL
23
1
PP
M
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL N-Ch UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
60 V
20 V
Drain Current
DC@TA=25
DC@TA=70
Pulsed
ID
IDP
Drain-Source-Diode Forward Current
IS
Drain Power Dissipation
TA=25
TA=70
PD
Maximum Junction Temperature
Tj
Storage Temperature Range
Tstg
Thermal Resistance, Junction to Ambient
RthJA
Note : Package Mounted on 99.5% Alumina (10 8 0.6mm)
2.0
1.6
10
1.0
1.25
0.8
150
-55 150
100
A
A
W
/W
PIN CONNECTION (TOP VIEW)
D3
3
2
G
2007. 4. 17
1 21
S
Revision No : 0
SOT-23
KND
1/5
1 page  
KMB2D0N60SA
Fig8. Gate Charge Circuit and Wave Form
Schottky
ID Diode
0.5 VDSS
1.0 mA
VGS
ID
VDS
VGS
10 V
Qgs Qgd
Qg
Q
Fig9. Resistive Load Switching
0.5 VDSS
6Ω
10 V VGS
RL
VDS
VDS
90%
VGS 10%
td(on)
tr
ton
td(off)
tf
toff
2007. 4. 17
Revision No : 0
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet KMB2D0N60SA.PDF ] | |
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