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PDF K184 Data sheet ( Hoja de datos )
| Número de pieza | K184 | |
| Descripción | MOSFET ( Transistor ) - 2SK184 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK184
2SK184
Low Noise Audio Amplifier Applications
Unit: mm
· High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0)
· High breakdown voltage: VGDS = −50 V
· Low noise: NF = 1.0dB (typ.)
(VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ)
· High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
· Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDS
IG
PD
Tj
Tstg
Rating
-50
10
200
125
-55~125
Unit
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
IGSS
V (BR) GDS
VGS = -30 V, VDS = 0
VDS = 0, IG = -100 mA
IDSS
(Note)
VDS = 10 V, VGS = 0
VGS (OFF)
ïYfsï
Ciss
VDS = 10 V, ID = 0.1 mA
VDS = 10 V, VGS = 0, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 MHz
Crss
NF (1)
VDG = 10 V, ID = 0, f = 1 MHz
VDS = 10 V, RG = 1 kW, ID = 0.5 mA,
f = 10 Hz
NF (2)
VDS = 10 V, RG = 1 kW, ID = 0.5 mA,
f = 1 kHz
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14.0 mA
Min Typ. Max Unit
¾ ¾ -1.0 nA
-50 ¾
¾
V
1.2 ¾ 14.0 mA
-0.2
¾ -1.5
V
4.0 15 ¾ mS
¾ 13 ¾ pF
¾ 3 ¾ pF
¾ 5 10
dB
¾1
2
1 2003-03-25
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet K184.PDF ] | |
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