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PDF J13009 Data sheet ( Hoja de datos )

Número de pieza J13009
Descripción FJP13009
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! J13009 Hoja de datos, Descripción, Manual

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March 2007
FJP13009
High Voltage Fast-Switching NPN Power Transistor
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Switching Mode Power Supply
1 TO-220
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings* TC = 25°C unless otherwise noted (notes_1)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP Collector Current (Pulse)
IB Base Current
PC Collector Dissipation (TC = 25°C)
TJ Junction Temperature
TSTG
Storage Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
700
400
9
12
24
6
100
150
-65 ~ 150
NOTES_1:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Package Marking and Ordering Information
Device Item (notes_2)
FJP13009
FJP13009H2TU
FJP13009TU
Device Marking
J13009
J130092
J13009
Package
TO-220
TO-220
TO-220
Packing Method
Bulk
TUBE
TUBE
Notes_2 :
1) The Affix “-H2” means the hFE classification.
2) The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging.
Units
V
V
V
A
A
A
W
°C
°C
Qty(pcs)
1,200
1,000
1,000
©2007 Fairchild Semiconductor Corporation
FJP13009 Rev. B
1
www.fairchildsemi.com

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J13009 pdf
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Mechanical Dimensions
TO-220
9.90 ±0.20
(8.70)
ø3.60 ±0.10
4.50 ±0.20
1.30
+0.10
–0.05
1.27 ±0.10
2.54TYP
[2.54 ±0.20]
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
0.50
+0.10
–0.05
2.40 ±0.20
10.00 ±0.20
FJP13009 Rev. B
Dimensions in Millimeters
5 www.fairchildsemi.com

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