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PDF IRFN140 Data sheet ( Hoja de datos )
| Número de pieza | IRFN140 | |
| Descripción | POWER MOSFET N-CHANNEL | |
| Fabricantes | International Rectifier | |
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Provisional Data Sheet No. PD-9.1546
HEXFET® POWER MOSFET
IRFN140
N-CHANNEL
100 Volt, 0.077Ω HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors.The effi-
cient geometry achieves very low on-stateresistancecom-
bined with high transconductance.
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param-
eter temperature stability. They are well-suited for appli-
cations such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits.
The Surface Mount Device (SMD-1) package represents
another step in the continual evolution of surface mount
technology. The SMD-1 will give designers the extra flex-
ibility they need to increase circuit board density. Inter-
national Rectifier has engineered the SMD-1 package to
meet the specific needs of the power market by increas-
ing the size of the termination pads, thereby enhancing
thermal and electrical performance.
Product Summary
Part Number
BVDSS
IRFN140
100V
Features:
s Avalanche Energy Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
s Surface Mount
s Light-weight
RDS(on)
0.077Ω
ID
28A
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRFN140
28
20
112
125
1.0
±20
250
28
12.5
5.5
-55 to 150
300 (for 5 seconds)
2.6 (typical)
Units
A
W
W/K
V
mJ
A
mJ
V/ns
oC
g
To Order
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IRFN140 Device
10
Index
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1
0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
PDM
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
Fig. 12a — Unclamped Inductive Test Circuit
Fig. 12b — Unclamped Inductive Waveforms
Fig. 12c — Max. Avalanche Energy vs. Current
To Order
Fig. 13a — Gate Charge Test Circuit
5 Page | ||
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| PDF Descargar | [ Datasheet IRFN140.PDF ] | |
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