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PDF FGD2N40L Data sheet ( Hoja de datos )
| Número de pieza | FGD2N40L | |
| Descripción | 400V N-Channel Logic Level IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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www.DataSheet4U.com
March 2006
FGD2N40L
400V N-Channel Logic Level IGBT
Features
VCE(SAT) = 1.6V @ IC = 2.5A, VGE = 2.4V
6kV ESD Protected
High Peak Current Density
TO-252 (D-Pak)
Low VGE(TH)
General Description
This N-Channel IGBT is a MOS gated, logic level device
which has been especially tailored for small engine ignition
applications. The gate is ESD protected with a zener diode.
Applications
Small Engine Ignition Applications
©2006 Fairchild Semiconductor Corporation
FGD2N40L Rev. A
1
www.fairchildsemi.com
1 page  
www.DataSheet4U.com
Typical Performance Characteristics
1000
100
toff
tfall
ton
trise
VCE = 300V, VGE = 4V, RGE = 51Ω,
TJ = 25oC
0 5 10 15 20 25
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 13. Switching Time Vs. Collector Current
1000
toff
tfall
ton
trise
100 VCE = 300V, VGE = 4V, ICE = 2.5A,
TJ = 25oC
0
Figure 14.
50 100 150 200 250 300
RG, GATE RESISTANCE (Ω)
Switching Time Vs. Gate Resistance
10
IC = 2.5A, VCC = 300V
8 TJ = 25oC
6
4
2
0
0 2 4 6 8 10 12
Qg, GATE CHARGE (nC)
Figure 15. Gate Charge
25
125oC
20
150oC
25oC
15
-40oC
10
5
0
0.5
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGE, GATE TO EMITTER VOLTAGE (V)
4.5
Figure 16. Transfer
1.12
1.10
ICE = 1mA
1.08
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
-40
-20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (oC)
160
Figure 17. Normalized Collector to Emitter
Breakdown Voltage Vs. Junction Temperature
FGD2N40L Rev. A
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FGD2N40L.PDF ] | |
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