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PDF 6MBI100UB-120 Data sheet ( Hoja de datos )

Número de pieza 6MBI100UB-120
Descripción IGBT Module U-Series 1200V / 100A 6 in one-package
Fabricantes FE 
Logotipo FE Logotipo



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6MBI100UB-120www.DataSheet4U.com
IGBT Module U-Series 1200V / 100A 6 in one-package
Features
Applications
· High speed switching
· Voltage drive
· Low inductance module structure
· Inverter for Motor drive
· Uninterruptible power supply
· AC and DC Servo drive amplifier · Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector current
Symbol
VCES
VGES
IC
ICp
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
between thermistor and others *2
Screw Torque
Mounting *3
-IC
-IC pulse
PC
Tj
Tstg
Viso
Conditions
Continuous Tc=25°C
Tc=80°C
1ms Tc=25°C
Tc=80°C
1 device
AC:1min.
Rating
1200
±20
150
100
300
200
100
200
520
+150
-40 to +125
2500
3.5
Unit
V
V
A
W
°C
VAC
N·m
*1 : All terminals should be connected together when isolation test will be done.
*2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted
to base plate when isolation test will be done.
*3 :Recommendable value : 2.5 to 3.5 N·m(M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbols Conditions
Characteristics
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
ICES
IGES
VGE(th)
VCE(sat)
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=100mA
VGE=15V, IC=100A Tj=25°C
Min.
4.5
Typ.
6.5
2.10
Max.
1.0
200
8.5
2.45
(terminal)
Tj=125°C
2.35 –
VCE(sat)
Tj=25°C
1.75 2.10
(chip)
Tj=125°C
2.00 –
Input capacitance
Turn-on time
Cies VCE=10V, VGE=0V, f=1MHz
ton VCC=600V
– 11
– 0.36 1.20
tr IC=100A
– 0.21 0.60
Turn-off time
tr(i) VGE=±15V
toff RG=5.6
– 0.03 –
– 0.37 1.00
tf – 0.07 0.30
Forward on voltage
VF VGE=0V
Tj=25°C
1.95 2.25
(terminal) IF=100A
Tj=125°C
2.05 –
VF
Tj=25°C
1.60 1.90
(chip)
Tj=125°C
1.70 –
Reverse recovery time
Lead resistance, terminal-chip*4
trr
R lead
IF=100A
––
0.35
– 3.4 –
Resistance
R T=25°C
– 5000
B value
B
*4:Biggest internal terminal resistance among arm.
T=100°C
T=25/50°C
465
3305
495
3375
520
3450
Unit
mA
nA
V
V
nF
µs
V
µs
m
Κ
Thermal resistance characteristics
Items
Symbols
Conditions
Thermal resistance
Contact Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*5
IGBT
FWD
With thermal compound
Characteristics
Min.
Typ.
––
– 0.05
Max.
0.24
0.39
Unit
°C/W
°C/W
°C/W
*5 : This is the value which is defined mounting on the additional cooling fin with thermal compound.

1 page




6MBI100UB-120 pdf
6MBI100UB-120
Outline Drawings, mm
M633
IGBT Module
Equivalent Circuit Schematic
30,31 ,32
1
2
3
4
33,34 ,35
5
6
U
27,28 ,29
7
8
( ) shows reference dimension.
9
10
V
24,25 ,26
11
12
16,17 ,18
19
20
W
21,22 ,23
13,14 ,15

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