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PDF GTS6923 Data sheet ( Hoja de datos )
| Número de pieza | GTS6923 | |
| Descripción | P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET | |
| Fabricantes | GTM | |
| Logotipo |  |
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Pb Free Plating Product
ISSUED DATE :2006/05/04
REVISED DATE :
GTS6923
P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET
BVDSS
RDS(ON)
ID
-20V
50m
-3.5A
Description
The GTS6923 provides the designer with the best combination of fast switching, ultra low on-resistance and
cost-effectiveness.
Features
*Low on-resistance
*Fast Switch Characteristic
*Included Schottky Diode
Package Dimensions
REF.
A
A1
b
c
D
Absolute Maximum Ratings
Parameter
Drain-Source Voltage (MOSFET and Schottky)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current3 (MOSFET)
Continuous Drain Current3 (MOSFET)
Pulsed Drain Current1 (MOSFET)
Average Forward Current (Schottky)
Pulsed Forward Current1 (Schottky)
Total Power Dissipation (MOSFET)
Total Power Dissipation (Schottky)
Storage Temperature Range
Operating Junction Temperature Range
Symbol
VDS
VKA
VGS
ID @Ta=25
ID @Ta=70
IDM
IF
IFM
PD @Ta=25
Tstg
Tj
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 (MOSFET) Max.
Thermal Resistance Junction-ambient3 (Schottky) Max.
Symbol
Rthj-a
Millimeter
Min. Max.
- 1.20
0.05
0.15
0.19
0.30
0.09
0.20
2.90
3.10
REF.
E
E1
e
L
S
Ratings
-20
20
±12
-3.5
-2.8
-30
1
25
1
1
-55 ~ +150
-55 ~ +125
Value
125
Millimeter
Min. Max.
6.20
6.60
4.30
4.50
0.65 BSC
0.45
0.75
0° 8°
Unit
V
V
V
A
A
A
A
A
W
W
Unit
/W
GTS6923
Page: 1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet GTS6923.PDF ] | |
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