(PDF) GTC9926 Datasheet - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Número de pieza	GTC9926
Descripción	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes	GTM
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No Preview Available ! www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2004/10/18 REVISED DATE :2006/07/27B GTC9926 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 28m 6A Description The GTC9926 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Features Low on-resistance Capable of 2.5V gate drive *Low drive current Package Dimensions REF. A A1 b c D Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current3 ,[email protected] Drain Current3 ,[email protected] Pulsed Drain Current1, Power Dissipation VDS VGS ID @Ta=25 ID @Ta=70 IDM PD @Ta=25 Operating Junction and Storage Temperature Range Tj, Tstg Linear Derating Factor Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a Millimeter Min. Max. - 1.20 0.05 0.15 0.19 0.30 0.09 0.20 2.90 3.10 REF. E E1 e L S Ratings 20 ±12 6 4.8 20 1 -55 ~ +150 0.008 Value 125 Millimeter Min. Max. 6.20 6.60 4.30 4.50 0.65 BSC 0.45 0.75 0° 8° Unit V V A A A W W/ Unit /W 1/4 1 page

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PDF GTC9926 Data sheet ( Hoja de datos )