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PDF IAM-93516 Data sheet ( Hoja de datos )
| Número de pieza | IAM-93516 | |
| Descripción | High Linearity Integrated GaAs Mixer | |
| Fabricantes | Agilent | |
| Logotipo |  |
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Agilent IAM-93516 High Linearity
Integrated GaAs Mixer
Data Sheet
Description
Agilent Technologies’s IAM-
93516 is a high linearity GaAs
FET Mixer using 0.5um
enhancement mode pHEMT
technology. This device houses
in a 3x3 LPCC package. The
IAM-93516 has a built-in LO
buffer amplifier and an IF
amplification stage that serve
as an ideal solution for
reducing board space and
delivering excellent high IIP3,
gain and isolation with a low
LO drive power. The device is
designed with a differential
configuration to provide good
noise immunity. The LO port
is 50 ohm matched and can be
driven differential or single
ended. An interstage match is
introduced between the mixer
and amplifier stage to allow
device tuning at the desired
RF and LO frequency. The
interstage match can be a
simple low pass, high pass or
intermediate frequency trap.
The amplifier output port is
200 ohm matched and fully
differential. The simple
matching at the RF port
provides for optimum input
return loss, noise figure and
IIP3 performance.
The IAM-93516 is ideally
suited for frequency down
conversion for base station
radio card receiver, microwave
link receiver, MMDS,
modulation and demodulation
for receiver and general
purpose resistive FET mixer,
which require high linearity.
All devices are 100% RF and
DC tested.
Applications
• Frequency down converter for
base station radio card,
microwave link transceiver, and
MMDS
• Modulation and demodulation for
receiver
• General purpose resistive FET
mixer for other high linearity
applications
Features
• DC =5V @ 111mA (Typ.)
• RF =1.91 GHz, PinRF = -10 dBm;
• LO =1.7 GHz, PinLO = 0 dBm;
• IF = 210 MHz unless otherwise
specified
• High Linearity: 23.1 dBm IIP3(typ)
• Conversion Gain: 9.4 dB typical
• Low Noise Figure: 11.6 dB
• Wide band operation:
• 400-3000 MHz RF & LO input
• 70 – 300 MHz IF output
• Fully differential or single ended
operation
• High P1dB: 19.3 dB typical
• Consistent RF performance over
LO Power
• Low current consumption: 5V@
111mA typical
• Excellent uniformity in product
specifications
• 3mm x 3mm x 0.9mm LPCC
package
• MTTF > 300 years[1]
• MSL-1 and Lead-free.
1 page  
40
35
30
25 C
25
-40 C
20 85 C
15
-14 -12 -10 -8 -6 -4 -2 0 2 4 6
LO Power (dBm)
Figure 11. RF-IF Isolation vs. LO Power and Temperature
35
30
25
20
15
10
-14 -12 -10 -8 -6 -4 -2 0 2
LO Power(dBm)
Figure 12. LO-RF Isolation vs. LO Power and Temperature
25 C
-40 C
85 C
46
12
10
8
6
4 LO= -3dBm
LO=0dBm
2
LO=3dBm
0
1.6 1.7 1.8 1.9
2.0 2.1
2.2
RF Frequency (GHz)
Figure 13. Conversion Gain vs. RF Frequency and LO Power at fixed IF
frequency[11]
28
27
26
25
24
23
22
21 LO= -3dBm
20 LO=0dBm
19 LO=3dBm
18
1.6 1.7 1.8 1.9
2
RF Frequency (GHz)
2.1 2.2
Figure 14. IIP3 vs. RF Frequency and LO Power at fixed IF frequency
[11]
45
40
35
30
25 LO=-3dBm
LO=0dBm
20 LO=3dBm
15
1.6 1.7 1.8 1.9
2
RF Frequency (GHz)
2.1 2.2
Figure 15. RF-IF Isolation vs. RF Frequency and LO Power at fixed IF
frequency
26
24
22
20
18
16
14 LO= -3dBm
LO=0dBm
12
LO=3dBm
10
1.4 1.5 1.6 1.7 1.8
1.9 2
LO Frequency (GHz)
Figure 16. LO-IF Isolation vs. LO Frequency and LO Power at fixed IF
frequency
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IAM-93516.PDF ] | |
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