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PDF M63823P Data sheet ( Hoja de datos )

Número de pieza M63823P
Descripción (M63823xP) 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
Fabricantes Mitsubishi Electric 
Logotipo Mitsubishi Electric Logotipo



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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63823P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
M63823P, M63823FP and M63823GP are seven-circuit
Darlington transistor arrays with clamping diodes. The cir-
cuits are made of NPN transistors. Both the semi-conductor
integrated circuits perform high-current driving with ex-
tremely low input-current supply.
Production lineup has been newly expanded with the addi-
tion of 225mil (GP) package.
M63823P and M63823FP have the same pin connection as
M54523P and M54523FP. (Compatible with M54523P and
M54523FP) More over, the features of M63823P and
M63823FP are equal or superior to those of M54523P and
M54523FP.
FEATURES
q Three package configurations (P, FP and GP)
q Pin connection Compatible with M54523P and M54523FP
q High breakdown voltage (BVCEO 50V)
q High-current driving (IC(max) = 500mA)
q With clamping diodes
q PMOS Compatible input
q Wide operating temperature range (Ta = –40 to +85°C)
PIN CONFIGURATION
INPUT
IN11
IN22
IN33
IN44
IN55
IN66
IN77
GND 8
16 O1
15 O2
14 O3
13 O4 OUTPUT
12 O5
11 O6
10 O7
9 COM COMMON
16P4(P)
16P2N-A(FP)
Package type 16P2S-A(GP)
CIRCUIT DIAGRAM
INPUT
2.7k
COM
OUTPUT
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M63823P, M63823FP and M63823GP each have seven
circuits consisting of NPN Darlington transistors. These ICs
have resistance of 2.7kbetween input transistor bases and
input pins. A spike-killer clamping diode is provided between
each output pin (collector) and COM pin (pin 9). The output
transistor emitters are all connected to the GND pin (pin 8).
The collector current is 500mA maximum. Collector-emitter
supply voltage is 50V maximum.The M63823FP and
M63823GP is enclosed in molded small flat package, en-
abling space-saving design.
7.2k
3k
GND
The seven circuits share the COM and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit :
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Parameter
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +50
500
–0.5 ~ +30
500
50
1.47(P)/1.00(FP)/0.80(GP)
–40 ~ +85
–55 ~ +125
Unit
V
mA
V
mA
V
W
°C
°C
Jan. 2000

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