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PDF M63817P Data sheet ( Hoja de datos )

Número de pieza M63817P
Descripción (M63817xx) 8-UNIT 300mA TRANSISTOR ARRAY
Fabricantes Mitsubishi Electric 
Logotipo Mitsubishi Electric Logotipo



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PRELIMINARYNSootimcee: pTahrisamisentroict alimfinitaslasrpeescuifbicjeactitotno. change.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63817P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63817P/FP/KP are eight-circuit Single transistor arrays
with clamping diodes. The circuits are made of NPN transis-
tors. Both the semiconductor integrated circuits perform
high-current driving with extremely low input-current supply.
FEATURES
q Three package configurations (P, FP, and KP)
q Medium breakdown voltage (BVCEO 35V)
q Synchronizing current (IC(max) = 300mA)
q With clamping diodes
q Low output saturation voltage
q Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63817P/FP/KP each have eight circuits consisting of
NPN transistor. A spike-killer clamping diode is provided be-
tween each output pin (collector) and COM pin. The transis-
tor emitters are all connected to the GND pin. The transistors
allow synchronous flow of 300mA collector current. A maxi-
mum of 35V voltage can be applied between the collector
and emitter.
PIN CONFIGURATION
INPUT
IN11
IN22
IN33
IN44
IN55
IN66
IN77
IN88
GND 9
18 O1
17 O2
16 O3
15 O4
14 O5
13 O6
OUTPUT
12 O7
11 O8
10 COM COMMOM
Package type 18P4G(P)
NC 1
IN12
IN23
IN34
INPUT
IN45
IN56
IN67
IN78
IN89
GND 10
20 NC
19 O1
18 O2
17 O3
16 O4
15 O5
OUTPUT
14 O6
13 O7
12 O8
11 COM COMMOM
NC : No connection
20P2N-A(FP)
Package type 20P2E-A(KP)
CIRCUIT DIAGRAM
COM
OUTPUT
INPUT
10.5k
10k
GND
The eight circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit:
Jan. 2000

1 page




M63817P pdf
PRELIMINARYNSootimcee: pTahrisamisentroict alimfinitaslasrpeescuifbicjeactitotno. change.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63817P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Output Saturation Voltage
Collector Current Characteristics
100
II = 2mA
80
Ta = –40°C
Ta = 25°C
60 Ta = 85°C
40
20
0
0 0.05 0.10 0.15 0.20
Output saturation voltage VCE(sat) (V)
Grounded Emitter Transfer Characteristics
50
VCE = 4V
40
30 Ta = 85°C
20
10
Ta = –40°C
Ta = 25°C
0
0 1.0 2.0 3.0 4.0 5.0
Input voltage VI (V)
Clamping Diode Characteristics
250
200
150
Ta = 85°C
100
Ta = 25°C
50
Ta = –40°C
0
0 0.4 0.8 1.2 1.6 2.0
Forward bias voltage VF (V)
DC Amplification Factor
Collector Current Characteristics
103
VCE 10V
7 Ta = 25°C
5
3
2
102
7
5
3
2
101100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Collector current Ic (mA)
Grounded Emitter Transfer Characteristics
250
VCE = 4V
Ta = 85°C
200
150
Ta = 25°C
100
Ta = –40°C
50
0
0 4 8 12 16 20
Input voltage VI (V)
Jan. 2000

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