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Número de pieza | M63817P | |
Descripción | (M63817xx) 8-UNIT 300mA TRANSISTOR ARRAY | |
Fabricantes | Mitsubishi Electric | |
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PRELIMINARYNSootimcee: pTahrisamisentroict alimfinitaslasrpeescuifbicjeactitotno. change.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63817P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63817P/FP/KP are eight-circuit Single transistor arrays
with clamping diodes. The circuits are made of NPN transis-
tors. Both the semiconductor integrated circuits perform
high-current driving with extremely low input-current supply.
FEATURES
q Three package configurations (P, FP, and KP)
q Medium breakdown voltage (BVCEO ≥ 35V)
q Synchronizing current (IC(max) = 300mA)
q With clamping diodes
q Low output saturation voltage
q Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63817P/FP/KP each have eight circuits consisting of
NPN transistor. A spike-killer clamping diode is provided be-
tween each output pin (collector) and COM pin. The transis-
tor emitters are all connected to the GND pin. The transistors
allow synchronous flow of 300mA collector current. A maxi-
mum of 35V voltage can be applied between the collector
and emitter.
PIN CONFIGURATION
INPUT
IN1→ 1
IN2→ 2
IN3→ 3
IN4→ 4
IN5→ 5
IN6→ 6
IN7→ 7
IN8→ 8
GND 9
18 →O1
17 →O2
16 →O3
15 →O4
14 →O5
13 →O6
OUTPUT
12 →O7
11 →O8
10 →COM COMMOM
Package type 18P4G(P)
NC 1
IN1→ 2
IN2→ 3
IN3→ 4
INPUT
IN4→ 5
IN5→ 6
IN6→ 7
IN7→ 8
IN8→ 9
GND 10
20 NC
19 →O1
18 →O2
17 →O3
16 →O4
15 →O5
OUTPUT
14 →O6
13 →O7
12 →O8
11 →COM COMMOM
NC : No connection
20P2N-A(FP)
Package type 20P2E-A(KP)
CIRCUIT DIAGRAM
COM
OUTPUT
INPUT
10.5k
10k
GND
The eight circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit: Ω
Jan. 2000
1 page PRELIMINARYNSootimcee: pTahrisamisentroict alimfinitaslasrpeescuifbicjeactitotno. change.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63817P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Output Saturation Voltage
Collector Current Characteristics
100
II = 2mA
80
Ta = –40°C
Ta = 25°C
60 Ta = 85°C
40
20
0
0 0.05 0.10 0.15 0.20
Output saturation voltage VCE(sat) (V)
Grounded Emitter Transfer Characteristics
50
VCE = 4V
40
30 Ta = 85°C
20
10
Ta = –40°C
Ta = 25°C
0
0 1.0 2.0 3.0 4.0 5.0
Input voltage VI (V)
Clamping Diode Characteristics
250
200
150
Ta = 85°C
100
Ta = 25°C
50
Ta = –40°C
0
0 0.4 0.8 1.2 1.6 2.0
Forward bias voltage VF (V)
DC Amplification Factor
Collector Current Characteristics
103
VCE 10V
7 Ta = 25°C
5
3
2
102
7
5
3
2
101100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Collector current Ic (mA)
Grounded Emitter Transfer Characteristics
250
VCE = 4V
Ta = 85°C
200
150
Ta = 25°C
100
Ta = –40°C
50
0
0 4 8 12 16 20
Input voltage VI (V)
Jan. 2000
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet M63817P.PDF ] |
Número de pieza | Descripción | Fabricantes |
M63817FP | (M63817xx) 8-UNIT 300mA TRANSISTOR ARRAY | Mitsubishi Electric |
M63817KP | (M63817xx) 8-UNIT 300mA TRANSISTOR ARRAY | Mitsubishi Electric |
M63817P | (M63817xx) 8-UNIT 300mA TRANSISTOR ARRAY | Mitsubishi Electric |
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