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PDF M63814GP Data sheet ( Hoja de datos )

Número de pieza M63814GP
Descripción (M63814xx) 7-UNIT 300mA TRANSISTOR ARRAY
Fabricantes Mitsubishi Electric 
Logotipo Mitsubishi Electric Logotipo



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PRELIMINARYNSootimcee: pTahrisamisentroict alimfinitaslasrpeescuifbicjeactitotno. change.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63814P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63814P/FP/GP/KP are seven-circuit Single transistor ar-
rays with clamping diodes. The circuits are made of NPN
transistors. Both the semiconductor integrated circuits per-
form high-current driving with extremely low input-current
supply.
FEATURES
q Four package configurations (P, FP, GP and KP)
q Medium breakdown voltage (BVCEO 35V)
q Synchronizing current (IC(max) = 300mA)
q With clamping diodes
q Low output saturation voltage
q Wide operating temperature range (Ta = –40 to +85°C)
PIN CONFIGURATION
IN11
IN22
INz33
INPUT
IN44
IN55
IN66
IN77
GND 8
16 O1
15 O2
14 O3
13 O4 OUTPUT
12 O5
11 O6
10 O7
9 COM COMMOM
Package type
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
16P2Z-A(KP)
CIRCUIT DIAGRAM
COM
OUTPUT
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63814P/FP/GP/KP each have seven circuits consist-
ing of NPN transistor. A spike-killer clamping diode is pro-
vided between each output pin (collector) and COM pin
(pin9). The transistor emitters are all connected to the GND
pin (pin 8). The transistors allow synchronous flow of 300mA
collector current. A maximum of 35V voltage can be applied
between the collector and emitter.
INPUT
10.5k
10k
GND
The seven circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit:
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VCEO
IC
VI
IF
VR
Parameter
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Pd Power dissipation
Topr Operating temperature
Tstg Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted
on board
M63814P
M63814FP
M63814GP
M63814KP
Ratings
–0.5 ~ +35
300
–0.5 ~ +35
300
35
1.47
1.00
0.80
0.78
–40 ~ +85
–55 ~ +125
Unit
V
mA
V
mA
V
W
°C
°C
Jan. 2000

1 page




M63814GP pdf
PRELIMINARYNSootimcee: pTahrisamisentroict alimfinitaslasrpeescuifbicjeactitotno. change.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63814P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Grounded Emitter Transfer Characteristics
50
VCE = 4V
40
30 Ta = 85°C
20
10
Ta = –40°C
Ta = 25°C
0
0 1.0 2.0 3.0 4.0 5.0
Input voltage VI (V)
Clamping Diode Characteristics
250
200
150
Ta = 85°C
100
Ta = 25°C
50
Ta = –40°C
0
0 0.4 0.8 1.2 1.6 2.0
Forward bias voltage VF (V)
Grounded Emitter Transfer Characteristics
250
VCE = 4V
Ta = 85°C
200
150
Ta = 25°C
100
Ta = –40°C
50
0
0 4 8 12 16 20
Input voltage VI (V)
Jan. 2000

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