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PDF M63806KP Data sheet ( Hoja de datos )

Número de pieza M63806KP
Descripción (M63806xx) 8-UNIT 300mA TRANSISTOR ARRAY
Fabricantes Mitsubishi Electric 
Logotipo Mitsubishi Electric Logotipo



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PRELIMINARYNSootimcee: pTahrisamisentroict alimfinitaslasrpeescuifbicjeactitotno. change.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63806P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
DESCRIPTION
M63806P/FP/KP are eight-circuit Single transistor arrays.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
FEATURES
q Three package configurations (P, FP, and KP)
q Medium breakdown voltage (BVCEO 35V)
q Synchronizing current (IC(max) = 300mA)
q Low output saturation voltage
q Wide operating temperature range (Ta = –40 to +85°C)
PIN CONFIGURATION
INPUT
IN11
IN22
IN33
IN44
IN55
IN66
IN77
IN88
GND 9
18 O1
17 O2
16 O3
15 O4
14 O5
13 O6
12 O7
11 O8
10 NC
OUTPUT
Package type 18P4G(P)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63806P/FP/KP each have eight circuits consisting of
NPN transistor. The transistor emitters are all connected to
the GND pin. The transistors allow synchronous flow of
300mA collector current. A maximum of 35V voltage can be
applied between the collector and emitter.
NC 1
IN12
IN23
IN34
INPUT
IN45
IN56
IN67
IN78
IN89
GND 10
20 NC
19 O1
18 O2
17 O3
16 O4
15 O5
14 O6
13 O7
12 O8
11 NC
OUTPUT
NC : No connection
20P2N-A(FP)
Package type 20P2E-A(KP)
CIRCUIT DIAGRAM
OUTPUT
INPUT
2.7K
10K
GND
The eight circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit:
Jan. 2000

1 page




M63806KP pdf
PRELIMINARYNSootimcee: pTahrisamisentroict alimfinitaslasrpeescuifbicjeactitotno. change.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63806P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
Output Saturation Voltage
Collector Current Characteristics
100
II = 2mA
80
Ta = –40°C
Ta = 25°C
60 Ta = 85°C
40
20
0
0 0.05 0.10 0.15 0.20
Output saturation voltage VCE(sat) (V)
Grounded Emitter Transfer Characteristics
50
VCE = 4V
40
Ta = 25°C
30
Ta = 85°C
20
Ta = –40°C
10
00 0.4 0.8 1.2 1.6 2.0
Input voltage VI (V)
DC Amplification Factor
Collector Current Characteristics
103
VCE 10V
7 Ta = 25°C
5
3
2
102
7
5
3
2
101
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Collector current Ic (mA)
Grounded Emitter Transfer Characteristics
250
VCE = 4V
200
Ta = 85°C
150
Ta = 25°C
100
Ta = –40°C
50
0
0 12 34 5
Input voltage VI (V)
Jan. 2000

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