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PDF M63802P Data sheet ( Hoja de datos )

Número de pieza M63802P
Descripción (M63802xx) 7-UNIT 300mA TRANSISTOR ARRAY
Fabricantes Mitsubishi Electric 
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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63802P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY
DESCRIPTION
M63802P, M63802FP, M63802GP and M63802KP are
seven-circuit Singe transistor arrays. The circuits are made
of NPN transistors. Both the semiconductor integrated cir-
cuits perform high-current driving with extremely low input-
current supply.
FEATURES
q Four package configurations (P, FP, GP and KP)
q Medium breakdown voltage (BVCEO35V)
q Synchronizing current (IC(max) = 300mA)
q With zener diodes
q Low output saturation voltage
q Wide operating temperature range (Ta=–40 to +85°C)
PIN CONFIGURATION
INPUT
IN11
IN22
IN33
IN44
IN55
IN66
IN77
16 O1
15 O2
14 O3
13 O4
12 O5
11 O6
10 O7
OUTPUT
GND 8
9 NC
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
Package type 16P2Z-A(KP) NC : No connection
CIRCUIT DIAGRAM
OUTPUT
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63802P, M63802FP, M63802GP and M63802KP each
have seven circuits consisting of NPN transistor. The transis-
tor emitters are all connected to the GND pin (pin 8).
The transistors allow synchronous flow of 300mA collector
current. A maximum of 35V voltage can be applied between
the collector and emitter.
INPUT
Vz=7V
10.5k
10k
GND
The seven circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit:
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VCEO
IC
VI
Parameter
Collector-emitter voltage
Collector current
Input voltage
Pd Power dissipation
Topr Operating temperature
Tstg Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted
on board
M63802P
M63802FP
M63802GP
M63802KP
Ratings
–0.5 ~ +35
300
–0.5 ~ +35
1.47
1.00
0.80
0.78
–40 ~ +85
–55 ~ +125
Unit
V
mA
V
W
°C
°C
Jan. 2000

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