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Número de pieza | M54513P | |
Descripción | 8-UNIT 50mA TRANSISTOR ARRAY | |
Fabricantes | Mitsubishi Electric | |
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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54513P/FP
8-UNIT 50mA TRANSISTOR ARRAY
DESCRIPTION
M54513P and M54513FP are eight-circuit transistor arrays.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
FEATURES
High breakdown voltage (BVCEO ≥ 40V)
Synchronizing current (Ic(max) = 50mA)
Wide operating temperature range (Ta = –20 to +75°C)
PIN CONFIGURATION
IN1→
1
IN2→
2
IN3→ 3
INPUT
IN4→
4
IN5→
5
IN6→
6
IN7→ 7
IN8→ 8
GND 9
18
→O1
17
→O2
16 →O3
15
→O4
OUTPUT
14
→O5
13
→O6
12 →O7
11 →O8
10 NC
Package type 18P4G(P) NC : No connection
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M54513P and M54513FP each have eight circuits con-
sisting of NPN transistors. These ICs have resistance of 2
kΩ at inputs and of 13.6kΩ between the base and emitter.
The GND is used in common in each circuit.
The transistors allow synchronous flow of 50mA collector
current. A maximum of 40V voltage can be applied between
the collector and emitter.
The M54513FP is enclosed in a molded small flat package,
enabling space-saving design.
NC 1
IN1→
2
IN2→
3
IN3→ 4
INPUT
IN4→
5
IN5→
6
IN6→
7
IN7→ 8
IN8→ 9
GND 10
20 NC
19
→O1
18
→O2
17 →O3
16 →O4
OUTPUT
15
→O5
14
→O6
13 →O7
12 →O8
11 NC
Package type 20P2N-A(FP) NC : No connection
CIRCUIT DIAGRAM
INPUT
2K
OUTPUT
13.6K
GND
The eight circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
Aug. 1999
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet M54513P.PDF ] |
Número de pieza | Descripción | Fabricantes |
M54513FP | 8-UNIT 50mA TRANSISTOR ARRAY | Mitsubishi Electric |
M54513P | 8-UNIT 50mA TRANSISTOR ARRAY | Mitsubishi Electric |
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