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PDF EMH2601 Data sheet ( Hoja de datos )
| Número de pieza | EMH2601 | |
| Descripción | N-Channel and P-Channel Silicon MOSFETs | |
| Fabricantes | Sanyo Semicon Device | |
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Ordering number : EN8731
EMH2601
SANYO Semiconductors
DATA SHEET
EMH2601
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
• The EMH2601 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
ultrahigh-speed switching, thereby enabling high-density mounting.
• 1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2!0.8mm) 1unit
Mounted on a ceramic board (900mm2!0.8mm)
Parameter
Symbol
Conditions
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : FA
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=4V
ID=0.8A, VGS=2.5V
ID=0.3A, VGS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
N-channel
P-channel
20 --20
±10 ±10
3 --2
12 --8
1.0
1.2
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Ratings
min typ max
Unit
20 V
1 µA
±10 µA
0.4 1.3 V
2.4 4.0
S
58 76 mΩ
71 99 mΩ
98 150 mΩ
365 pF
77 pF
67 pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71006PE MS IM TC-00000042 No.8731-1/6
1 page  
EMH2601
SW Time -- ID
[Nch]
5
VDD=10V
3 VGS=4V
2
100
7
5
3
2
10
7
5
0.01
1000
7
5
3
td(off)
tf
tr
td(on)
2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7
Drain Current, ID -- A
IT10409
Ciss, Coss, Crss -- VDS [Nch]
f=1MHz
Ciss
2
SW Time -- ID
[Pch]
5
VDD= --10V
3 VGS= --4V
2
100
7
5
3
2
10
7
5
3
--0.01
1000
7
5
td(off)
tf
td(on)
tr
2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5
Drain Current, ID -- A
IT10544
Ciss, Coss, Crss -- VDS [Pch]
f=1MHz
Ciss
3
2
100 Coss
7 Crss
5
3
2
0 5 10 15
Drain-to-Source Voltage, VDS -- V
VGS -- Qg
4.0
VDS=10V
3.5 ID=3A
20
IT10410
[Nch]
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Total Gate Charge, Qg -- nC
IT10411
ASO
[Nch]
3
2 IDP=12A
≤10µs
10
7
5 ID=3A
1m10s0µs
3
2
1.0
7
5
3
2
Operation in this
area is limited by
RDDCSo(poenra)t.io1n0(0Tma1=s02m5s°C)
0.1
7
5
3 Ta=25°C
2 Single pulse
0.01 Mounted on a ceramic board (900mm2!0.8mm) 1unit
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
5
Drain-to-Source Voltage, VDS -- V IT10412
100
Coss
7
5 Crss
3
2
0 --5 --10 --15
Drain-to-Source Voltage, VDS -- V
VGS -- Qg
--4.0
VDS= --10V
--3.5 ID= --2A
--20
IT10545
[Pch]
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Total Gate Charge, Qg -- nC
IT10546
ASO
[Pch]
2
--10 IDP= --8A
≤10µs
7
5
3 ID= --2A
2
--1.0
7
5
3
DC op1e0ra0tmio1sn0m1sm1s00µs
2 Operation in this area
--0.1 is limited by RDS(on).
7
5
3 Ta=25°C
2 Single pulse
--0.01 Mounted on a ceramic board (900mm2!0.8mm) 1unit
--0.01 2 3 5 7 --0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3
Drain-to-Source Voltage, VDS -- V IT10547
No.8731-5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMH2601.PDF ] | |
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