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Número de pieza | ECH8622R | |
Descripción | N-Channel Silicon MOSFET | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
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Ordering number : EN8719
ECH8622R
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ECH8622R General-Purpose Switching Device
Applications
Features
• Low ON-resistance.
• Best suited for lithium battery applications.
• 2.5V drive.
• Composite type, facilitating high-density mounting.
• Drain common specifications.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2! 0.8mm) 1unit
Mounted on a ceramic board (900mm2! 0.8mm)
Ratings
30
±12
7
40
1.4
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : WG
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)4
Ciss
Coss
Crss
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=3.5A
ID=4A, VGS=4.5V
ID=4A, VGS=4.0V
ID=4A, VGS=3.1V
ID=2A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
min
30
0.5
6
12.6
13.3
14.3
15
Ratings
typ
max
Unit
V
1 µA
±10 µA
1.3 V
10 S
18 23 mΩ
19 25 mΩ
22 29 mΩ
25 34 mΩ
1220
pF
180 pF
140 pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 / 62006PE MS IM TB-00002071 No.8719-1/4
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PDF Descargar | [ Datasheet ECH8622R.PDF ] |
Número de pieza | Descripción | Fabricantes |
ECH8622R | N-Channel Silicon MOSFET | Sanyo Semicon Device |
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