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Número de pieza | 2SC3807C | |
Descripción | NPN Epitaxial Planar Silicon Transistor | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
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Ordering number : ENA0439
2SC3807C
SANYO Semiconductors
DATA SHEET
2SC3807C
NPN Epitaxial Planar Silicon Transistor
25V / 2A High-hFE, Low Frequency
General-Purpose Amplifier Applications
Applications
• Low-frequency general-purpose amplifiers, drivers.
Features
• Large current capacity (IC=2A).
• Adoption of MBIT process.
• High DC current gain (hFE=1000 to 2000).
• Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
• High VEBO (VEBO≥17V).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
30
25
17
2
4
1.2
15
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30707LA TI IM TC-00000055 No. A0439-1/4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2SC3807C.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SC3807 | NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
2SC3807 | TRANSISTOR | WEJ |
2SC3807 | SILICON NPN TRANSISTOR | Foshan Eming Electronics |
2SC3807C | NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
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