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PDF 2SB1730 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1730 | |
| Descripción | General purpose amplification | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistors
2SB1730
General purpose amplification(−12V, −2A)
2SB1730
zApplications
Low frequency amplifier
Deiver
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) ≤ −180mV
at IC= −1A / IB= −50mA
zExternal dimensions (Unit : mm)
(2)
(3)
(1)
0.2 1.7 0.2
2.1
0.15Max.
zPackaging specifications
Package
Type
Code
Basic ordering
unit (pieces)
2SB1730
Taping
TL
3000
ROHM : TUMT3
Abbreviated symbol : FV
(1) Base
(2) Emitter
(3) Collector
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗ Single pulse Pw=1ms
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
−15
−12
−6
−2
−4
400
150
−55 to +150
Unit
V
V
V
A
A∗
mW
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown viltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collerctor-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
−15
−12
−6
−
−
−
270
−
−
Typ.
−
−
−
−
−
−120
−
360
15
Max.
−
−
−
−100
−100
−180
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC=−10µA
IC=−1mA
IE=−10µA
VCB=−15V
VEB=−6V
IC=−1A, IB=−50mA
VCE=−2V, IC=−200mA∗
VCE=−2V, IE=200mA, f=100MHz∗
VCB=−10V, IE=0mA, f=1MHz
Rev.A
1/2
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB1730.PDF ] | |
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