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PDF GSA1625 Data sheet ( Hoja de datos )
| Número de pieza | GSA1625 | |
| Descripción | PNP EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | GTM | |
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ISSUED DATE :2004/12/16
REVISED DATE :
GSA1625
PNP SILICON TRANSISTOR
Description
The GSA1625 is designed for general purpose amplifier and high speed switching applications.
Features
High Voltage
High Speed Switching
Low Collector Saturation Voltage
Package Dimensions
D
E
S1
TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current(pulse)*
Total Power Dissipation
*pw 2ms, Duty Cycle 50%
Characteristics at
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
IC
PD
Ta = 25
Symbol
Min.
BVCBO
-400
BVCEO
-400
BVEBO
-7
ICBO
-
IEBO
-
*VCE(sat)
-
*VBE(sat)
-
*hFE
40
fT 20
Cob -
Classification Of hFE
Rank
Range
M
40 - 80
Typ.
-
-
-
-
-
-
-
80
40
17
Max.
-
-
-
-10
-10
-0.5
-1.2
200
-
20
L
60 - 120
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Ratings
+150
-55 ~ +150
-400
-400
-7
-500
-1000
750
Unit
V
V
V
mA
mA
mW
Unit
V
V
V
A
A
V
V
MHz
pF
Test Conditions
IC=-100uA
IC=-1mA
IE=-100uA
VCB=-400V, IE=0
VEB=-5V, IC=0
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-5V, IC=-50mA
VCE=-10V, IE=-10mA
VCB=-10V, IE=0, f=1MHz
K
100 -200
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GSA1625.PDF ] | |
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