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PDF GS152B Data sheet ( Hoja de datos )
| Número de pieza | GS152B | |
| Descripción | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | GTM | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de GS152B (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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ISSUED DATE :2006/02/06
REVISED DATE :
GS152B
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-20V
300m
-0.7A
Description
The GS152B provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The GS152B is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Features
*Low On-State Resistance:0.3 (max)
*Ultra High Speed Switching
Applications
*Notebook PCs
*Cellular and portable phones
*On-board power supplies
*Li-ion battery System
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0 0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Ratings
-20
±12
-0.7
-2.8
0.35
0.0028
-55 ~ +150
Value
360
Unit
V
V
A
A
W
W/
Unit
/W
GS152B
Page: 1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet GS152B.PDF ] | |
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