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PDF GE75NF75 Data sheet ( Hoja de datos )
| Número de pieza | GE75NF75 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | GTM | |
| Logotipo |  |
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ISSUED DATE :2006/09/05
REVISED DATE :
GE75NF75
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
75V
11m
80A
Description
The GE75NF75 uses advanced trench technology to provide excellent on-resistance extremely efficient and
cost-effectiveness device.
The through-hole version (TO-220) is available for low-profile applications and suited for low voltage
applications such as DC/DC converters.
Features
*High Density Cell Design for Ultra Low On-Resistance
*High power and Current handing capability
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID @TC=25
Continuous Drain Current
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
EAS
Single Pulse Avalanche Current
IAS
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
75
±25
80
56
200
268
1.78
350
38
-55 ~ +175
Unit
V
V
A
A
A
W
W/
mJ
A
Value
0.56
60
Unit
/W
/W
GE75NF75
Page: 1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet GE75NF75.PDF ] | |
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