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PDF GE13003 Data sheet ( Hoja de datos )

Número de pieza GE13003
Descripción NPN SILICON POWER TRANSISTOR
Fabricantes GTM 
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No Preview Available ! GE13003 Hoja de datos, Descripción, Manual

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ISSUED DATE :2005/01/12
REVISED DATE :
GE13003
NPN SILICON POWER TRANSISTOR
Description
The GE13003 is designed for high voltage, high speed power switching inductive circuit where fall time is
critical. It is particularly suited for 115 and 220v Switch-mode.
Features
Inductive Switching Matrix 0.5~1.5Amp, 25 and 100
700V Blocking Capability
SOA and Switching Application Information
tc @ 1A, 100
is 290ns(Typ)
Package Dimensions
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Emitter Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Symbol
Tj
Tstg
VCEO(sus)
VCEO
VEBO
Collector Current -Continuous
-Peak(1)
IC
ICM
Base Current -Continuous
-Peak(1)
IB
IBM
Emitter Current -Continuous
-Peak(1)
Total Power Dissipation at Ta=25
Derate above 25
IE
IEM
PD
Total Power Dissipation at Tc=25
Derate above 25
PD
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
+150
-55 ~ +150
400
700
9
1.5
3.0
0.75
1.5
2.25
4.5
1.4
11.2
40
320
Unit
V
V
V
A
A
A
W
mW /
W
mW /
Thermal Characteristics
Parameter
Thermal Resistance, Junction-ambient
Thermal Resistance, Junction-case
Maximum Lead Temperature for Soldering
Purposes:1/8” from Case for 5 Seconds
(1)Pulse Test: Pulse Width=5ms, Duty Cycle 10%
Symbol
R JA
R JC
TL
Value
89
3.12
275
Unit
/W
/W
1/4

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