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PDF DS1135 Data sheet ( Hoja de datos )
| Número de pieza | DS1135 | |
| Descripción | 3-in-1 High-Speed Silicon Delay Line | |
| Fabricantes | Dallas Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de DS1135 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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PRELIMINARY
DS1135
3-in-1 High-Speed Silicon Delay Line
www.dalsemi.com
FEATURES
All-silicon timing circuit
Three independent buffered delays
Stable and precise over temperature and
voltage
Leading and trailing edge precision preserves
the input symmetry
Standard 8-pin DIP and 8-pin SOIC
(150 mil)
Vapor phasing, IR and wave solderable
Available in Tape and Reel
Commercial and industrial temperature ranges
available; see order info table
5V operation (for 3V operation, see part
number DS1135L)
Recommended replacement for DS1013 and
DS1035
PIN ASSIGNMENT
IN1
IN2
IN3
GND
1
2
3
4
8 VCC
7 OUT1
6 OUT2
5 OUT3
DS1135M 8-Pin DIP
IN1
IN2
IN3
GND
1 8 VCC
2 7 OUT1
3 6 OUT2
4 5 OUT3
DS1135Z 8-Pin SOIC (150 mil)
IN1
IN2
IN3
GND
1 8 VCC
2 7 OUT1
3 6 OUT2
4 5 OUT3
DS1135U 8-Pin 118-mil uSOP
PIN DESCRIPTION
IN1-IN3
- Input Signals
OUT1-OUT3
- Output Signals
VCC - +5V Supply
GND
- Ground
DESCRIPTION
The DS1135 series is a low-power, +5-volt high-speed version of the popular DS1013 and DS1035.
The DS1135 series of delay lines have three independent logic buffered delays in a single package. The
device is Dallas Semiconductor’s fastest 3-in-1 delay line. It is available in a standard 8-pin DIP and
150 mil 8-pin Mini-SOIC, as well as an 8-pin, 118 mil uSOP.
The device features precise leading and trailing edge accuracy. It has the inherent reliability of an all-
silicon delay line solution. Each output is capable of driving up to 10 LS loads.
Standard delay values are indicated in Table 1. Customers may contact Dallas Semiconductor at
(972) 371-4348 for further information on custom delay values.
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061500
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TEST CONDITIONS
Ambient Temperature: 25°C ±=3°C
Supply Voltage (VCC ): 5.0V ±=0.1V
Input Pulse:
High: 3.0V ±=0.1V
Low: 0.0V ±=0.1V
Source Impedance: 50Ω=Max.
Rise and Fall Time: 3.0 ns Max. - Measured between 0.6V and 2.4V.
Pulse Width: 500 ns
Pulse Period: 1 µs
Output Load Capacitance: 15 pF
Output: Each output is loaded with the equivalent of one 74F04 input gate.
Data is measured at the 1.5V level on the rising and falling edges.
DS1135
NOTE:
The above conditions are for test only and do not restrict the devices under other data sheet conditions.
TIMING DIAGRAM
tRISE
PERIOD
tFALL
80%
20%
IN
OUT
1.5V
1.5V
tWI
tPLH
tPHL
tOR
1.5V
1.5V
tWI
tOF
1.5V
NOTES:
1. All voltages are referenced to ground.
2. Pulse width and duty cycle specifications may be exceeded, however, accuracy will be application
sensitive with respect to decoupling, layout, etc.
3. Power-up time is the time from the application of power to the time stable delays are being produced
at the output.
5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet DS1135.PDF ] | |
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