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PDF DS1112SG Data sheet ( Hoja de datos )
| Número de pieza | DS1112SG | |
| Descripción | Rectifier Diode | |
| Fabricantes | Dynex Semiconductor | |
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DS1112SG
DS1112SG
Rectifier Diode
Replaces January 2000 version, DS4181-4.0
FEATURES
s Double Side Cooling
s High Surge Capability
APPLICATIONS
s Rectification
s Freewheel Diode
s DC Motor Control
s Power Supplies
s Welding
s Battery Chargers
KEY PARAMETERS
VRRM 6000V
IF(AV) 811A
I 10500A
FSM
DS4181-5.0 August 2001
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
Conditions
DS1112SG60
DS1112SG59
DS1112SG58
DS1112SG57
DS1112SG56
DS1112SG55
6000
5900
5800
5700
5600
5500
Lower voltage grades available.
V = V + 100V
RSM
RRM
Outline type code: G
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS1112SG58
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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1 page  
DS1112SG
10000
Conditions:
Tj = 150˚C
VR = 100V
IF = 1000A
35 400
I2t = Î2 x t
2
30 350
1000
25
I2t
20
15
300
250
200
100
0.1
IF
QS
dIF/dt
IRM
1.0 10
Rate of decay of forward current, dIF/dt - (A/µs)
100
Fig.4 Total stored charge
0.1
Anode side cooled
10 150
5 100
0 50
1 10 1 2 3 5 10 20 50
ms Cycles at 50Hz
Duration
Fig.5 Surge (non-repetitive) forward current vs time (with
50% VRRM at Tcase 125˚C)
Double side cooled
0.01
0.001
0.001
0.01
Conduction Effective thermal resistance
Junction to case ˚C/W
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Double side
0.032
0.034
0.044
0.057
Single side
0.064
0.066
0.076
0.089
0.1
Time - (s)
1.0
10
Fig.6 Maximum (limit) transient thermal impedance -
junction to case
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5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DS1112SG.PDF ] | |
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