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PDF DS1104SG Data sheet ( Hoja de datos )
| Número de pieza | DS1104SG | |
| Descripción | Rectifier Diode | |
| Fabricantes | Dynex Semiconductor | |
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DS1104SG
DS1104SG
Rectifier Diode
Replaces January 2000 version, DS4167-3.2
FEATURES
s Double Side Cooling
s High Surge Capability
APPLICATIONS
s Rectification
s Freewheel Diode
s DC Motor Control
s Power Supplies
s Welding
s Battery Chargers
KEY PARAMETERS
VRRM 3000V
IF(AV) 1571A
I 20000A
FSM
DS4167-4.0 August 2001
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
DS1104SG30
DS1104SG29
DS1104SG28
DS1104SG27
DS1104SG26
DS1104SG25
3000
2900
2800
2700
2600
2500
Lower voltage grades available.
Conditions
V = V + 100V
RSM
RRM
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS1104SG29
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
Outline type code: G
See Package Details for further information.
Fig. 1 Package outline
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1/7
1 page  
10000
Conditions:
Tj = 175˚C
VR = 100V
IF = 1000A
1000
Conditions:
Tj = 175˚C
VR = 100V
IF = 1000A
DS1104SG
1000
100
100
0.1
IF
QS
dIF/dt
IRM
1.0 10
Rate of decay of on-state current dIF/dt - (A/µs)
Fig.4 Total stored charge
100
30 1300
I2t = Î2 x t
2
25 1200
20 1100
10
0.1
1.0 10
Rate of decay of forward current, dIF/dt - (A/µs)
Fig.5 Maximum reverse recovery current
100
0.1
Anode side cooled
Double side cooled
15
1000
0.01
10
I2t
5
900
800
0 700
1 10 1 2 3 5 10 20 50
ms Cycles at 50Hz
Duration
Fig.6 Surge (non-repetitive) forward current vs time (with
50% VRRM at Tcase 175˚C)
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0.001
0.001
0.01
Conduction Effective thermal resistance
Junction to case ˚C/W
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Double side
0.032
0.034
0.044
0.057
Single side
0.064
0.066
0.076
0.089
0.1
Time - (s)
1.0
10
Fig.7 Maximum (limit) transient thermal impedance -
junction to case
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DS1104SG.PDF ] | |
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