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PDF GBC546 Data sheet ( Hoja de datos )
| Número de pieza | GBC546 | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | GTM | |
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GBC546
NPN SILICON TRANSISTOR
Description
The GBC546 is designed for drive and output-stages of audio amplifiers.
Features
High DC Current Gain: 110~800 @VCE=5V, IC=2mA
Complementary to GBC556
Package Dimensions
D
TO-92
E
S1
ISSUED DATE :2005/03/25
REVISED DATE :2005/10/21B
S E A T IN G
PLANE
b1
e1
e
b
C
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (continuous)
IC
Total Device Dissipation @ TA =25
Derate above 25
PD
Total Device Dissipation @ TC =25
Derate above 25
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance, Junction to Ambient
R JA
Thermal Resistance, Junction to Case
R JC
Ratings
80
65
6
100
625
5.0
1.5
12
-55 ~ +150
200
83.3
Unit
V
V
V
mA
mW
mW/
W
mW/
/W
/W
Electrical Characteristics (TA = 25 unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
BVCEO
80 - - V IC=100uA, IE=0
65 - - V IC=1mA, IB=0
BVEBO
ICES
6 - - V IE=10uA, IC=0
- - 15 nA VCE=70V, VBE=0
*VCE(sat)1
- 0.09 0.25 V IC=10mA, IB=0.5mA
*VCE(sat)2
*VBE(sat)
- 0.2 0.6 V IC=100mA, IB=5mA
- 0.7 -
V IC=10mA, IB=0.5mA
*VBE(on)1
0.55 - 0.7 V VCE=5V, IC=2mA
*VBE(on)2
*hFE
- - 0.77 V VCE=5V, IC=10mA
110 - 800
VCE=5V, IC=2mA
fT 150 300 - MHz VCE=5V, IC=10mA, f=100MHz
Cob - 1.7 4.5 pF VCB=10V, IC=0, f=1MHz
Classification Of hFE
Rank
A
Range
110 ~ 220
B
200 ~ 450
C
420 ~ 800
*Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GBC546
Page: 1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GBC546.PDF ] | |
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