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Número de pieza | GBAV99 | |
Descripción | consists of two diodes | |
Fabricantes | GTM | |
Logotipo | ||
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G B AV99
Description
The GBAV99 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is
designed for high-speed switching application in hybrid thick and thin-film circuits.
Package Dimensions
1/2
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Reverse Voltage
Repetitive Reverse Voltage
Forward Current
Repetitive Forward Current
Forward Surge Current(1ms)
Total Power Dissipation
Symbol
Tj
Tstg
PD
Style : Pin1.Anode 2.Cathode
3.Common Connection
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 2.70 3.10 G 1.90 REF.
B 2.40 2.80
H 1.00 1.30
C 1.40 1.60
K 0.10 0.20
D 0.35 0.50
J 0.40
-
E 0 0.10 L 0.85 1.15
F 0.45 0.55 M 0
10
Ratings
+150
-65~+150
70
70
150
500
1000
250
Unit
V
V
mA
mA
mA
mW
Characteristics at Ta = 25
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)
VF(1)
VF(2)
VF(3)
VF(4)
IR
CT
Trr
Min.
70
-
-
-
-
-
-
Max.
-
715
855
1000
1250
2.5
1.5
6
Unit
V
mV
mV
mV
mV
uA
pF
nS
Test Conditions
IR=100uA
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=70V
VR=0, f=1MHz
IF=IR=10mA, RL=100 measured at IR=1mA
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet GBAV99.PDF ] |
Número de pieza | Descripción | Fabricantes |
GBAV99 | consists of two diodes | GTM |
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