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PDF G2N5551 Data sheet ( Hoja de datos )
| Número de pieza | G2N5551 | |
| Descripción | NPN EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | GTM | |
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CORPORATION ISSUED DATE :2004/06/09
REVISED DATE :2004/11/29B
G2N5551 NPN EPITAXIAL PLANAR TRANSISTOR
Description
The G2N5551 is designed for general purpose switching and amplifier applications.
Features
*Complementary to PNP Type G2N5401
*High Collector – Emitter Breakdown Voltage (VCEO > 160V (@IC=1mA)
Package Dimensions
D
E
S1 TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Symbol
Tj
Tstg
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
VCBO
VCEO
VEBO
IC
PD
Characteristics at Ta = 25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
fT
Cob
Min. Typ. Max.
180 -
-
160 -
-
6- -
- - 50
- - 50
- - 0.15
- - 0.2
- -1
- -1
80 -
-
80 160 400
50 -
-
100 300
- -6
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Ratings
+150
-55 ~ +150
180
160
6
600
625
Unit
V
V
V
mA
mW
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=100uA , IE=0
IC=1mA,IB=0
IE=10uA ,IC=0
VCB=120V, IE=0
VEB=4V, IC=0
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, f=1MHz, IE=0
* Pulse Test: Pulse Width 380us, Duty Cycle
2%
Classification OF hFE2
Rank
A
Range
80-200
N
100-250
C
160-400
G2N5551
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