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PDF G2306 Data sheet ( Hoja de datos )
| Número de pieza | G2306 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | GTM | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de G2306 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Pb Free Plating Product
CORPORATION ISSUED DATE :2004/10/12
REVISED DATE :2005/03/22B
G2306
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
32m
5.3A
Description
The G2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial applications.
Features
Capable of 2.5V gate drive
Lower on-resistance
Reliable and Rugged
Applications
Power Management in Notebook Computer
Portable Equipment
Battery Powered System.
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@4.5V
Continuous Drain Current3, VGS@4.5V
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
20
12
5.3
4.3
10
1.38
0.01
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Ratings
90
Unit
/W
1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet G2306.PDF ] | |
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