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PDF IRG4IBC20KDPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG4IBC20KDPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD -94916
IRG4IBC20KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
Short Circuit Rated
ULTRAFAST SOFT RECOVERY DIODE
UltraFast IGBT
Features
• High switching speed optimized for up to 25kHz
with low VCE(on)
• Short Circuit Rating 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-220 FULLPAK
• Lead-Free
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.27V
@VGE = 15V, IC = 6.3A
Benefits
• Generation 4 IGBTs offer highest efficiencies available
maximizing the power density of the system
• IGBTs optimized for specific application conditions
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise EMI
• Designed to exceed the power handling capability of
equivalent industry-standard IGBTs
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VISOL
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
RMS Isolation Voltage, Terminal to Case, t = 1 min
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
600
11.5
6.3
23
24
6.3
24
10
2500
± 20
34
14
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
V
A
µs
V
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
–––
–––
2.0 (0.07)
Max.
3.7
5.5
65
–––
Units
°C/W
g (oz)
www.irf.com
1
12/30/03
1 page  
800
VCCCGiroeeesEss
=
=
=
=
0V,
CCCggceec
+
+
f = 1MHz
Cgc , Cce
Cgc
SHORTED
600
Cies
400
200
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.8 VCC = 480V
VGE
TJ
=
=
15V
25 °
C
IC = 9.0A
0.7
0.6
IRG4IBC20KDPbF
20 VCC = 400V
I C = 9.0A
16
12
8
4
0
0 10 20 30 40
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10 RG 5=0OΩhm
VGE = 15V
VCC = 480V
IC = 18A
1 IC = 9.09AA
IC = 4.5A
0.5
0
10 20 30 40
RRGG ,, GGaattee RReessisistatanncece( (ΩO)hm)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG4IBC20KDPBF.PDF ] | |
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