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PDF FTS2001 Data sheet ( Hoja de datos )

Número de pieza FTS2001
Descripción DC-DC Converter Applications
Fabricantes Sanyo Semicon Device 
Logotipo Sanyo Semicon Device Logotipo



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N-Channel Silicon MOSFET
FTS2001
DC-DC Converter Applications
Features
· Low ON resistance.
· 2.5V drive.
· Mount height 1.1mm.
Package Dimensions
unit:mm
2147
3.0
0.975
0.65
[FTS2001]
85
14
0.25
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (1000mm2×0.8mm)
Electrical Characteristics at Ta=25˚C
Parameter
Symbol
Conditons
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source "Miller" Charge
Gate-to-Drain Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=5A
ID=5A, VGS=4V
ID=2A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See Specified Test Circuit
See Specified Test Circuit
See Specified Test Circuit
See Specified Test Circuit
Qgs VDS=10V, VGS=10V, ID=5A
Qgd
VSD IS=5A, VGS=0
1:Drain
2:Source
3:Source
4:Gate
5:Drain
0.125 6:Source
7:Source
8:Drain
SANYO:SOP8
Ratings
20
±10
5
30
1.5
150
–55 to +150
Unit
V
V
A
A
W
˚C
˚C
Ratings
min typ
20
0.4
9 15
23
32
750
520
300
20
200
150
150
30
5
7
1.0
max
100
±10
1.3
30
46
1.2
Unit
V
µA
µA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61598TS (KOTO) TA-1232 No.5694-1/3

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