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PDF GBJ4M Data sheet ( Hoja de datos )
| Número de pieza | GBJ4M | |
| Descripción | (GBJ4A - GBJ4M) 4.0A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER | |
| Fabricantes | Won-Top Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de GBJ4M (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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WTE
POWER SEMICONDUCTORS
GBJ4A – GBJ4M Pb
4.0A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
Features
! Glass Passivated Die Construction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
G
! Ideal for Printed Circuit Boards
! Recognized File # E157705
C
H
J
K
Mechanical Data
! Case: KBJ-4, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: As Marked on Body
! Weight: 6.0 grams (approx.)
! Mounting Position: Any
! Mounting Torque: 10 cm-kg (8.8 in-lbs) Max.
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
A
+~~-
B
L
PPP
D
E
M
N
RG
S
T
KBJ-4
Dim Min
Max
A 24.7 25.3
B 14.7 15.3
C—
4.0
D 17.0 18.0
E 3.3
3.7
G 3.1Ø 3.6Ø
H 1.05 1.45
J 1.7 2.1
K 0.9
1.1
L 1.8 2.2
M 4.4
4.8
N 3.4
3.8
P 7.3
7.7
R 9.3
9.7
S 2.5
2.9
T 0.6 0.8
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol GBJ4A GBJ4B GBJ4D GBJ4G GBJ4J GBJ4K GBJ4M Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @TC = 115°C
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage per diode
@IF = 2.0A
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 125°C
Typical Thermal Resistance per leg (Note 2)
Typical Thermal Resistance per leg (Note 1)
Operating and Storage Temperature Range
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IR
RJA
RJC
Tj, TSTG
50
35
100 200 400 600 800 1000 V
70 140 280 420 560 700 V
4.0 A
150
1.0
10
250
30
5.5
-55 to +150
A
V
µA
°C/W
°C/W
°C
Note: 1. Device mounted on 75 x 75 x 1.6mm thick Al plate heatsink.
2. Device mounted on P.C.B. without heatsink.
GBJ4A – GBJ4M
1 of 4
© 2006 Won-Top Electronics
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet GBJ4M.PDF ] | |
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