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PDF EC9525 Data sheet ( Hoja de datos )

Número de pieza EC9525
Descripción LI-ION PROTECTION IC
Fabricantes E-CMOS 
Logotipo E-CMOS Logotipo



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No Preview Available ! EC9525 Hoja de datos, Descripción, Manual

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LI-ION PROTECTION IC
WITH POWER MOS
Preliminary
EC9525
Features
Low supply current
High accuracy detector
Threshold
Variety of detector threshold
Built in protection circuit
Output delay of over charge
Output delay of over-discharg
Package
Supply current
Standby current (after detecting over-discharge)
TYP. 3.0uA
TYP. 0.25uA
Over-charge detector(Topt=25ºC)
+/- 25mV
Over-charge detector (Topt=0 to 50ºC)
+/- 30mV
Over-discharge detector
+/- 3.0%
Over-charge detector threshold
4.0V to 4.4V step of 0.005V
Over-discharge detector threshold
2.0V to 3.0V step of 0.005V
Excess current protection
0.04V to 0.32V step of 0.04V
Accuracy
±20%
Time delay at VDD=4.3V
1.0S
VDD=2.4V with built-in capacitor
10mS
SOP-8/8-pin
Page 1 of 9
DR18EV103B-Ver2.5

1 page




EC9525 pdf
LI-ION PROTECTION IC
WITH POWER MOS
Preliminary
EC9525
ELECTRICAL CHARACTERISTIC
Symbol
Item
VDD1 Operating input voltage
Conditions
Voltage defined as VDD-Vss
MIN.
1.5
TYP.
Temp=25ºC
MAX. Unit
10 V
VDET1
Over-charge threshold
Detect rising
edge of supply 003
voltage
25ºC
0~50ºC
*Note
4.250
4.240
4.275
4.275
4.300
4.310
V
V
VREL1
tVDET1
VDET2
tVDET2
Release voltage for
over-charge detection
Output delay of over charge
Over-discharge threshold
Output delay of
over-discharge
-- 003
VDD=3.6V to 4.3V
Detect falling edge
of supply voltage
003
VDD=3.6V to 2.4V
4.050 4.075 4.10
0.6 1.0 1.4
2.425 2.500 2.575
7 10 13
V
S
V
ms
VDET3
Excess current threshold
Detect rising edge of
“V-“ pin voltage
003
0.1 0.12 0.14
V
tVDET3
Output delay of excess
current
VDD=3.0V
Vshort Short protection voltage
VDD=3.0V
tshort
Output delay of short
protection
VDD=3.0V
Rshort
Reset resistance for excess
current protection
VDD=3.6V,
V-=1.0V
IGSS Gate leakage current
VGS = ±10 V, VDS = 0 V
IDSS Drain cut.off current
VDS = 20 V, VGS = 0 V
V (BR) DSS Drain.source breakdown ID = 10 mA, VGS = 0 V
V (BR) DSX voltage
ID = 10 mA, VGS = .-12 V
Vth Gate threshold voltage VDS = 10 V, ID = 200 µA
RDS (ON)
RDS (ON)
Drain-source ON resistance VGS = 2.5 V, ID = 3A
VGS = 4 V, ID = 3 A
Vol1 Nch ON voltage of Cout
Iol=50uA,
VDD=4.4V
Voh1 Pch ON voltage of Cout
Iol=-50uA,
VDD=3.9V
Vol2 Nch ON voltage of Dout
Iol=50uA,
VDD=2.4V
Voh2 Pch ON voltage of Dout
Iol=-50uA,
VDD=3.9V
IDD Supply current
VDD=3.9V, V-=0V
Istandby
Standby current
VDD=2.0V
11 16 21
VDD- VDD- VDD-
1.2 0.9 0.6
300 400
ms
V
us
50 100 150 kOhm
±10 uA
10 uA
20 V
15 V
0.5 1.2 V
28 m
40 m
0.35 0.5
V
3.4 3.7
V
0.2 0.5
V
3.4 3.7
3.0 5.0
0.25 0.4
V
uA
uA
Page 5 of 9
DR18EV103B-Ver2.5

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