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PDF GSS6982 Data sheet ( Hoja de datos )
| Número de pieza | GSS6982 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | GTM | |
| Logotipo |  |
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Pb Free Plating Product
ISSUED DATE :2006/04/24
REVISED DATE :
GSS6982
CH1 BVDSS
30V
N-CH RDS(ON) 18m
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH ID
CH2 BVDSS
8.5A
30V
N-CH RDS(ON) 26m
Description
N-CH ID
7.3A
The GSS6982 provide the designer with the best combination of fast switching, ruggedized device design, ultra
low on-resistance and cost-effectiveness.
Features
*Low On-resistance
*Fast Switching
Package Dimensions
REF.
A
B
C
D
E
F
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-a
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
0° 8°
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Ratings
CH-1
CH-2
30 30
±25 ±25
8.5 7.3
6.8 5.8
30 30
2.0
0.016
-55 ~ +150
Value
62.5
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Unit
V
V
A
A
A
W
W/
Unit
/W
GSS6982
Page: 1/7
1 page  
CH-1
ISSUED DATE :2006/04/24
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
GSS6982
Fig 12. Gate Charge Waveform
Page: 5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet GSS6982.PDF ] | |
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