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PDF GSS4502 Data sheet ( Hoja de datos )

Número de pieza GSS4502
Descripción Power MOSFET ( Transistor )
Fabricantes GTM 
Logotipo GTM Logotipo



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Pb Free Plating Product
ISSUED DATE :2005/08/24
REVISED DATE :2005/09/29B
GSS4502
N-CH BVDSS 20V
N-CH RDS(ON) 18m
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH ID
P-CH BVDSS
8.3A
-20V
N-CH RDS(ON) 45m
Description
N-CH ID
-5A
The GSS4502 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*DC-DC Application
*Fast Switching
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
08
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
N-channel P-channel
20 -20
12 12
8.3 -5
6.5 -4
30 -20
2.0
0.016
-55 ~ +150
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-a
Value
62.5
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45
1.27 TYP.
Unit
V
V
A
A
A
W
W/
Unit
/W
GSS4502
Page: 1/9

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GSS4502 pdf
N-Channel
ISSUED DATE :2005/08/24
REVISED DATE :2005/09/29B
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
GSS4502
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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