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Número de pieza | GSS4226 | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | GTM | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de GSS4226 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Pb Free Plating Product
ISSUED DATE :2005/04/21
REVISED DATE :2005/09/30
GSS4226
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
18m
8.2A
Description
The GSS4226 provide the designer with the best combination of fast switching, ruggedized device design, ultra
low on-resistance and cost-effectiveness.
Features
*Low On-Resistance
*Simple Drive Requirement
*Dual N MOSFET Package
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
08
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
30
20
8.2
6.7
30
2
0.016
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-amb
Value
62.5
Unit
/W
GSS4226
Page: 1/4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet GSS4226.PDF ] |
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